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IRF5N5210
IRF5N5210
MOSFETs IRF5N5210
Infineon
IRF5N5210
--
Diodes, Transistors and Thyristors
MOSFETs
IRF5N5210.pdf
Specification
Product AttributeAttribute Value
HTS8541.21.00.75
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width16(Max)
Package Height3.58(Max)
Package Length11.55(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-1
Process TechnologyHEXFET
Standard Package NameSMD
Typical Fall Time (ns)116(Max)
Typical Rise Time (ns)150(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)215(Max)
Typical Gate Charge @ Vgs (nC)215(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)28(Max)
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)103(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)31
Typical Input Capacitance @ Vds (pF)2700@25V
Maximum Drain Source Resistance (mOhm)60@10V
Description
Trans MOSFET P-CH Si 100V 31A 3-Pin SMD-1
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