Product Attribute | Attribute Value |
HTS | 8541.21.00.75 |
PPAP | No |
EU RoHS | Not Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single |
Package Width | 16(Max) |
Package Height | 3.58(Max) |
Package Length | 11.55(Max) |
Product Category | Power MOSFET |
Supplier Package | SMD-1 |
Process Technology | HEXFET |
Standard Package Name | SMD |
Typical Fall Time (ns) | 116(Max) |
Typical Rise Time (ns) | 150(Max) |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 125000 |
Typical Gate Charge @ 10V (nC) | 215(Max) |
Typical Gate Charge @ Vgs (nC) | 215(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 28(Max) |
Maximum Drain Source Voltage (V) | 100 |
Typical Turn-Off Delay Time (ns) | 103(Max) |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 31 |
Typical Input Capacitance @ Vds (pF) | 2700@25V |
Maximum Drain Source Resistance (mOhm) | 60@10V |
Description |