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STL11N65M2
STL11N65M2
MOSFETs STL11N65M2
STMicroelectronics
STL11N65M2
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Diodes, Transistors and Thyristors
MOSFETs
STL11N65M2.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count12
AutomotiveNo
PCB changed12
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Hex Source
Package Width4.7
Package Height0.95(Max)
Package Length4.8
Product CategoryPower MOSFET
Supplier PackagePower Flat EP
Process TechnologyMDmesh M2
Typical Fall Time (ns)15
Typical Rise Time (ns)7.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)46000
Typical Gate Charge @ 10V (nC)12.5
Typical Gate Charge @ Vgs (nC)12.5@10V
Maximum Gate Source Voltage (V)±25
Typical Turn-On Delay Time (ns)9.5
Maximum Drain Source Voltage (V)650
Typical Turn-Off Delay Time (ns)26
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5
Typical Input Capacitance @ Vds (pF)410@100V
Maximum Drain Source Resistance (mOhm)750@10V
Description
Trans MOSFET N-CH 650V 5A 12-Pin Power Flat EP T/R
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