Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
Tab | Tab |
PPAP | No |
EU RoHS | Not Compliant |
Material | Si |
Mounting | Through Hole |
ECCN (US) | EAR99 |
Pin Count | 3 |
Automotive | No |
PCB changed | 3 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Package Width | 5.08(Max) |
Package Height | 10.67(Max) |
Package Length | 10.66(Max) |
Product Category | Power MOSFET |
Supplier Package | TO-257AA |
Process Technology | HEXFET |
Typical Fall Time (ns) | 27(Max) |
Typical Rise Time (ns) | 148(Max) |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 100000 |
Typical Gate Charge @ 10V (nC) | 100(Max) |
Typical Gate Charge @ Vgs (nC) | 100(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 30(Max) |
Maximum Drain Source Voltage (V) | 200 |
Typical Turn-Off Delay Time (ns) | 50(Max) |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 18 |
Typical Input Capacitance @ Vds (pF) | 2480@25V |
Maximum Drain Source Resistance (mOhm) | 92@10V |
Description |