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MOSFETs SIZ730DT-T1-GE3
Vishay
SIZ730DT-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.29.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 6 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual |
| Package Width | 6 |
| Package Height | 0.75(Max) |
| Package Length | 3.73 |
| Product Category | Power MOSFET |
| Supplier Package | PowerPAIR |
| Maximum IDSS (uA) | 1 |
| Process Technology | TrenchFET |
| Standard Package Name | PowerPAIR |
| Typical Fall Time (ns) | 7@Channel 1|10@Channel 2 |
| Typical Rise Time (ns) | 15@Channel 1|15|18@Channel 2 |
| Number of Elements per Chip | 2 |
| Maximum Gate Resistance (Ohm) | 2@Channel|1.6@Channel 2 |
| Minimum Gate Resistance (Ohm) | 0.2 |
| Maximum Power Dissipation (mW) | 3900@Channel 1|4600@Channel 2 |
| Typical Gate Charge @ 10V (nC) | 15.6@Channel 1|43@Channel 2 |
| Typical Gate Charge @ Vgs (nC) | 7.7@4.5V|15.6@10V@Channel 1|21.2@4.5V|43@10V@Channel 2 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 185@Channel 1|475@Channel 2 |
| Typical Turn-On Delay Time (ns) | 5|10@Channel 1|10|20@Channel 2 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 2.7 |
| Typical Turn-Off Delay Time (ns) | 15|17@Channel 1|30@Channel 2 |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.8@Channel 1|0.78@Channel 2 |
| Typical Gate to Drain Charge (nC) | 3@Channel 1|7.4@Channel 2 |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 2.6@Channel 1|7@Channel 2 |
| Typical Reverse Recovery Time (ns) | 15@Channel 1|25@Channel 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 16@Channel 1|35@Channel 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 830@15V@Channel 1|2370@10V@Channel 2 |
| Typical Reverse Recovery Charge (nC) | 6@Channel 1|15@Channel 2 |
| Maximum Drain Source Resistance (MOhm) | 9.3@10V@Channel 1|3.9@10V@Channel 2 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 70@Channel 1|100@Channel 2 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.9@Channel 1|4.6@Channel 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 80@15V@Channel 1|220@10V@Channel 2 |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 12.9@Channel 1|26.4@Channel 2 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 67@Channel 1|65@Channel 2 |
| Description |
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