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IRF60DM206
IRF60DM206
MOSFETs IRF60DM206
Infineon
IRF60DM206
--
Diodes, Transistors and Thyristors
MOSFETs
IRF60DM206.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant with Exemption
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count10
AutomotiveNo
PCB changed10
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Quint Source
Package Width5.05(Max)
Package Height0.53(Max)
Package Length5.45(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET ME
Maximum IDSS (uA)1
Process TechnologyDirectFET
Typical Fall Time (ns)30
Typical Rise Time (ns)32
Number of Elements per Chip1
Maximum Power Dissipation (mW)96000
Typical Gate Charge @ 10V (nC)133
Typical Gate Charge @ Vgs (nC)133@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)17
Maximum Drain Source Voltage (V)60
Typical Turn-Off Delay Time (ns)60
Maximum Gate Threshold Voltage (V)3.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)130
Typical Input Capacitance @ Vds (pF)6530@25V
Maximum Drain Source Resistance (mOhm)2.9@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 60V 130A 10-Pin Direct-FET ME T/R
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