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MOSFETs SCTWA70N120G2V-4
STMicroelectronics
SCTWA70N120G2V-4
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Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MaterialSiC
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count4
AutomotiveNo
PCB changed4
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Dual Source
Package Width5
Package Height21
Package Length15.8
Product CategoryPower MOSFET
Supplier PackageHIP-247
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)18
Typical Rise Time (ns)9
Number of Elements per Chip1
Maximum Power Dissipation (mW)547000
Typical Gate Charge @ Vgs (nC)150@18V
Maximum Gate Source Voltage (V)22
Typical Turn-On Delay Time (ns)15.5
Maximum Drain Source Voltage (V)1200
Typical Turn-Off Delay Time (ns)36
Maximum Operating Temperature (°C)200
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)91
Typical Input Capacitance @ Vds (pF)3540@800V
Maximum Drain Source Resistance (mOhm)30@18V
Description
Trans MOSFET N-CH SiC 1.2KV 91A 4-Pin(4+Tab) HIP-247 Tube
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