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IRF640
IRF640
MOSFETs IRF640
STMicroelectronics
IRF640
--
Diodes, Transistors and Thyristors
MOSFETs
IRF640.pdf
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.6(Max)
Package Height9.15(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)25
Typical Rise Time (ns)27
Number of Elements per Chip1
Maximum Power Dissipation (mW)125000
Typical Gate Charge @ 10V (nC)55
Typical Gate Charge @ Vgs (nC)55@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)200
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Maximum Continuous Drain Current (A)18
Typical Input Capacitance @ Vds (pF)1200@25V
Maximum Drain Source Resistance (MOhm)180@10V
Description
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Tube
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