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IRF6608TR1
IRF6608TR1
MOSFETs IRF6608TR1
Infineon
IRF6608TR1
--
Diodes, Transistors and Thyristors
MOSFETs
IRF6608TR1.pdf
Specification
Product AttributeAttribute Value
PPAPNo
SVHCYes
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeNo Lead
PCB changed7
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width3.95(Max)
Package Height0.53(Max)
Package Length3.95(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET ST
Process TechnologyHEXFET
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)3.4
Typical Rise Time (ns)12
Number of Elements per Chip1
Maximum Power Dissipation (mW)2100
Typical Gate Charge @ Vgs (nC)16@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)16
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)13
Typical Input Capacitance @ Vds (pF)2120@15V
Maximum Drain Source Resistance (mOhm)9@10V
Description
Trans MOSFET N-CH Si 30V 13A 7-Pin Direct-FET ST T/R
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