PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 7 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 7 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Dual Source |
Package Width | 5.05(Max) |
Package Height | 0.53(Max) |
Package Length | 5.45(Max) |
Product Category | Power MOSFET |
Supplier Package | Direct-FET MT |
Maximum IDSS (uA) | 5 |
Process Technology | DirectFET |
Typical Fall Time (ns) | 8.1 |
Typical Rise Time (ns) | 71 |
Typical Switch Charge (nC) | 19 |
Number of Elements per Chip | 1 |
Maximum Gate Resistance (Ohm) | 2.2 |
Maximum Power Dissipation (mW) | 2800 |
Typical Gate Charge @ Vgs (nC) | 43@4.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 1260 |
Typical Turn-On Delay Time (ns) | 21 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 2.9 |
Typical Turn-Off Delay Time (ns) | 27 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.78 |
Typical Gate to Drain Charge (nC) | 15 |
Maximum Gate Threshold Voltage (V) | 2.35 |
Minimum Gate Threshold Voltage (V) | 1.35 |
Typical Gate Threshold Voltage (V) | 1.64 |
Typical Gate to Source Charge (nC) | 12 |
Typical Reverse Recovery Time (ns) | 43 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -40 |
Maximum Continuous Drain Current (A) | 30 |
Operating Junction Temperature (°C) | -40 to 150 |
Typical Input Capacitance @ Vds (pF) | 5640@15V |
Typical Reverse Recovery Charge (nC) | 46 |
Maximum Drain Source Resistance (mOhm) | 2.2@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 240 |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2.8 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 570@15V |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 170 |
Description | |