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IRF6662TRPBF
IRF6662TRPBF
MOSFETs IRF6662TRPBF
Infineon
IRF6662TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF6662TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count7
AutomotiveNo
Lead ShapeNo Lead
PCB changed7
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Dual Source
Package Width5.05(Max)
Package Height0.53(Max)
Package Length5.45(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET MZ
Process TechnologyDirectFET
Standard Package NameDirect-FET
Typical Fall Time (ns)5.9
Typical Rise Time (ns)7.5
Number of Elements per Chip1
Maximum Power Dissipation (mW)2800
Typical Gate Charge @ 10V (nC)22
Typical Gate Charge @ Vgs (nC)22@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)24
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)8.3
Typical Input Capacitance @ Vds (pF)1360@25V
Maximum Drain Source Resistance (mOhm)22@10V
Description
Trans MOSFET N-CH Si 100V 8.3A 7-Pin Direct-FET MZ T/R
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