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MOSFETs IRF6674TR1PBF
Infineon
IRF6674TR1PBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 7 |
| Automotive | No |
| Lead Shape | No Lead |
| PCB changed | 7 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Dual Source |
| Package Width | 5.05(Max) |
| Package Height | 0.53(Max) |
| Package Length | 5.45(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Direct-FET MZ |
| Process Technology | DirectFET |
| Standard Package Name | Direct-FET |
| Typical Fall Time (ns) | 8.7 |
| Typical Rise Time (ns) | 12 |
| Typical Switch Charge (nC) | 10.2 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 3600 |
| Typical Gate Charge @ 10V (nC) | 24 |
| Typical Gate Charge @ Vgs (nC) | 24@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 1580 |
| Typical Turn-On Delay Time (ns) | 7 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 12 |
| Typical Gate to Drain Charge (nC) | 8.3 |
| Maximum Gate Threshold Voltage (V) | 4.9 |
| Typical Gate to Source Charge (nC) | 5.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 13.4 |
| Typical Input Capacitance @ Vds (pF) | 1350@25V |
| Typical Reverse Recovery Charge (nC) | 36 |
| Maximum Drain Source Resistance (mOhm) | 11@10V |
| Description |
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