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IRF7105
IRF7105
MOSFETs IRF7105
Infineon
IRF7105
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7105.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)37@P Channel|25@N Channel
Typical Rise Time (ns)13@P Channel|9@N Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)10@P Channel|9.4@N Channel
Typical Gate Charge @ Vgs (nC)10@10V@P Channel|9.4@10V@N Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)12@P Channel|7@N Channel
Maximum Drain Source Voltage (V)25
Typical Turn-Off Delay Time (ns)45
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.3@P Channel|3.5@N Channel
Typical Input Capacitance @ Vds (pF)290@15V@P Channel|330@15V@N Channel
Maximum Drain Source Resistance (mOhm)250@10V@P Channel|100@10V@N Channel
Description
Trans MOSFET N/P-CH 25V 3.5A/2.3A 8-Pin SOIC T/R
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