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SI7454DP-T1-GE3
SI7454DP-T1-GE3
MOSFETs SI7454DP-T1-GE3
Vishay
SI7454DP-T1-GE3
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPUnknown
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveUnknown
Lead ShapeNo Lead
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width5.89
Package Height1.07(Max)
Package Length4.9
Product CategoryPower MOSFET
Supplier PackagePowerPAK SO
Process TechnologyTrenchFET
Typical Fall Time (ns)20
Typical Rise Time (ns)10
Number of Elements per Chip1
Maximum Power Dissipation (mW)4800
Typical Gate Charge @ 10V (nC)24
Typical Gate Charge @ Vgs (nC)24@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)35
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5
Maximum Drain Source Resistance (mOhm)34@10V
Description
Trans MOSFET N-CH 100V 5A Automotive 8-Pin PowerPAK SO T/R
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