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Specification
| Product Attribute | Attribute Value |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.5(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC |
| Process Technology | HEXFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 7.7 |
| Typical Rise Time (ns) | 21 |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 25(Max) |
| Typical Gate Charge @ Vgs (nC) | 25(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 180 |
| Typical Turn-On Delay Time (ns) | 6.8 |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 22 |
| Typical Gate to Drain Charge (nC) | 7.9(Max) |
| Maximum Gate Threshold Voltage (V) | 1(Min) |
| Typical Gate to Source Charge (nC) | 2.9(Max) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.9 |
| Typical Input Capacitance @ Vds (pF) | 520@25V |
| Typical Reverse Recovery Charge (nC) | 56 |
| Maximum Drain Source Resistance (mOhm) | 50@10V |
| Description |
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Beam Electronics is a one-stop platform for electronic components from overseas sites under the "BEAM TECHNOLOGY COMPANY LIMITED" (supporting online ordering and trading). Beam Electronics is committed to building an efficient overseas intelligent IC components trading platform, the main business scope of overseas regions! With the wisdom of data-driven services, the company aims to improve procurement efficiency for the midstream and downstream enterprises in the IC industry, and is determined to become a reliable one-stop procurement platform for overseas IC supply chain.
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