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IRF7307QPBF
IRF7307QPBF
MOSFETs IRF7307QPBF
Infineon
IRF7307QPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7307QPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP|N
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)33@P Channel|51@N Channel
Typical Rise Time (ns)26@P Channel|42@N Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)22(Max)@4.5V@P Channel|20(Max)@4.5V@N Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)8.4@P Channel|9@N Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)51@P Channel|32@N Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)4.3@P Channel|5.2@N Channel
Typical Input Capacitance @ Vds (pF)660@15V@N Channel|610@15V@P Channel
Maximum Drain Source Resistance (MOhm)90@4.5V@P Channel|50@4.5V@N Channel
Description
Trans MOSFET N/P-CH Si 20V 5.2A/4.3A 8-Pin SOIC
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