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MOSFETs TPS1100DG4
Texas Instruments
TPS1100DG4
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| Packaging | Tube |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Unconfirmed |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Package Width | 3.98(Max) |
| Package Height | 1.5(Max) |
| Package Length | 5(Max) |
| Product Category | Small Signal |
| Supplier Package | SOIC |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 2 |
| Typical Rise Time (ns) | 10 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 791 |
| Typical Gate Charge @ 10V (nC) | 5.45 |
| Typical Gate Charge @ Vgs (nC) | 5.45@10V |
| Maximum Gate Source Voltage (V) | 2 |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Maximum Drain Source Voltage (V) | 15 |
| Typical Turn-Off Delay Time (ns) | 13 |
| Typical Gate to Drain Charge (nC) | 1.4 |
| Maximum Gate Threshold Voltage (V) | 1.5 |
| Typical Gate to Source Charge (nC) | 0.87 |
| Maximum Operating Temperature (°C) | 125 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Continuous Drain Current (A) | 1.6 |
| Maximum Drain Source Resistance (mOhm) | 400@4.5V |
| Description |
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