Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Not Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P|N |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC |
Process Technology | HEXFET |
Typical Fall Time (ns) | 18@P Channel|7.7@N Channel |
Typical Rise Time (ns) | 17@P Channel|21@N Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 1400 |
Typical Gate Charge @ Vgs (nC) | 25(Max)@4.5V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 11@P Channel|6.8@N Channel |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 25@P Channel|22@N Channel |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3@P Channel|4@N Channel |
Typical Input Capacitance @ Vds (pF) | 440@15V@P Channel|520@15V@N Channel |
Maximum Drain Source Resistance (MOhm) | 100@10V@P Channel|50@10V@N Channel |
Description |