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IRF7314TR
IRF7314TR
MOSFETs IRF7314TR
Infineon
IRF7314TR
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7314TR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)49
Typical Rise Time (ns)40
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)19@4.5V
Maximum Gate Source Voltage (V)±12
Typical Output Capacitance (pF)470
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)42
Typical Gate to Drain Charge (nC)7.7
Maximum Gate Threshold Voltage (V)0.7(Min)
Typical Gate to Source Charge (nC)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.3
Typical Input Capacitance @ Vds (pF)780@15V
Typical Reverse Recovery Charge (nC)49
Maximum Drain Source Resistance (mOhm)58@4.5V
Description
Trans MOSFET P-CH Si 20V 5.3A 8-Pin SOIC N T/R
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