Product Attribute | Attribute Value |
HTS | 8541.29.00.95 |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 31@N Channel|49@P Channel |
Typical Rise Time (ns) | 17@N Channel|40@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ Vgs (nC) | 18@4.5V@N Channel|19@4.5V@P Channel |
Maximum Gate Source Voltage (V) | ±12 |
Typical Turn-On Delay Time (ns) | 8.1@N Channel|15@P Channel |
Maximum Drain Source Voltage (V) | 20 |
Typical Turn-Off Delay Time (ns) | 38@N Channel|42@P Channel |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 6.6@N Channel|5.3@P Channel |
Typical Input Capacitance @ Vds (pF) | 900@15V@N Channel|780@15V@P Channel |
Maximum Drain Source Resistance (mOhm) | 29@4.5V@N Channel|58@4.5V@P Channel |
Description |