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IRF7319TRPBF
IRF7319TRPBF
MOSFETs IRF7319TRPBF
Infineon
IRF7319TRPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF7319TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)17@N Channel|32@P Channel
Typical Rise Time (ns)8.9@N Channel|13@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)22@N Channel|23@P Channel
Typical Gate Charge @ Vgs (nC)22@10V@N Channel|23@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)8.1@N Channel|13@P Channel
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)26@N Channel|34@P Channel
Maximum Gate Threshold Voltage (V)1
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.5@N Channel|4.9@P Channel
Typical Input Capacitance @ Vds (pF)650@25V@N Channel|710@25V@P Channel
Maximum Drain Source Resistance (mOhm)29@10V@N Channel|58@10V@P Channel
Description
Trans MOSFET N/P-CH Si 30V 6.5A/4.9A 8-Pin SOIC T/R
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