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IRF7342
IRF7342
MOSFETs IRF7342
Infineon
IRF7342
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7342.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)22
Typical Rise Time (ns)10
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)26
Typical Gate Charge @ Vgs (nC)26@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)14
Maximum Drain Source Voltage (V)55
Typical Turn-Off Delay Time (ns)43
Maximum Gate Threshold Voltage (V)1(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.4
Typical Input Capacitance @ Vds (pF)690@25V
Maximum Drain Source Resistance (mOhm)105@10V
Description
Trans MOSFET P-CH Si 55V 3.4A 8-Pin SOIC T/R
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