PPAP | No |
EU RoHS | Not Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain Triple Source |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 47 |
Typical Rise Time (ns) | 33 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ 10V (nC) | 59(Max) |
Typical Gate Charge @ Vgs (nC) | 59(Max)@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 490 |
Typical Turn-On Delay Time (ns) | 16 |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 3.8 |
Typical Turn-Off Delay Time (ns) | 45 |
Maximum Diode Forward Voltage (V) | 1 |
Typical Gate to Drain Charge (nC) | 21(Max) |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 5.7(Max) |
Typical Reverse Recovery Time (ns) | 42 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 5.8 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 1100@25V |
Typical Reverse Recovery Charge (nC) | 64 |
Maximum Drain Source Resistance (mOhm) | 45@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 23 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 220@25V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
Description | |