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IRF7406
IRF7406
MOSFETs IRF7406
Infineon
IRF7406
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7406.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)47
Typical Rise Time (ns)33
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ 10V (nC)59(Max)
Typical Gate Charge @ Vgs (nC)59(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)490
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.8
Typical Turn-Off Delay Time (ns)45
Maximum Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)21(Max)
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)5.7(Max)
Typical Reverse Recovery Time (ns)42
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.8
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1100@25V
Typical Reverse Recovery Charge (nC)64
Maximum Drain Source Resistance (mOhm)45@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)23
Typical Reverse Transfer Capacitance @ Vds (pF)220@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC N T/R
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