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IRF7478TRPBF
IRF7478TRPBF
MOSFETs IRF7478TRPBF
Infineon
IRF7478TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7478TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)13
Typical Rise Time (ns)2.6
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)21@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1590
Typical Turn-On Delay Time (ns)7.7
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)1.9
Typical Turn-Off Delay Time (ns)44
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)9.6
Maximum Gate Threshold Voltage (V)3
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)4.3
Typical Reverse Recovery Time (ns)52
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)7
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1740@25V
Typical Reverse Recovery Charge (nC)100
Maximum Drain Source Resistance (MOhm)26@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)56
Maximum Power Dissipation on PCB @ TC=25°C (W)2.5
Typical Reverse Transfer Capacitance @ Vds (pF)37@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)50
Description
Trans MOSFET N-CH 60V 7A 8-Pin SOIC N T/R
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