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IRF7480MTRPBF
IRF7480MTRPBF
MOSFETs IRF7480MTRPBF
Infineon
IRF7480MTRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count10
AutomotiveNo
Lead ShapeNo Lead
PCB changed10
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Quint Source
Package Width5.05(Max)
Package Height0.53(Max)
Package Length5.45(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET ME
Maximum IDSS (uA)1
Process TechnologyDirectFET
Typical Fall Time (ns)58
Typical Rise Time (ns)70
Number of Elements per Chip1
Maximum Power Dissipation (mW)96000
Typical Gate Charge @ 10V (nC)123
Typical Gate Charge @ Vgs (nC)123@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)1035
Typical Turn-On Delay Time (ns)21
Maximum Drain Source Voltage (V)40
Typical Gate Plateau Voltage (V)4.2
Typical Turn-Off Delay Time (ns)68
Maximum Diode Forward Voltage (V)1.2
Typical Gate to Drain Charge (nC)44
Maximum Gate Threshold Voltage (V)3.9
Minimum Gate Threshold Voltage (V)2.1
Typical Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)31
Typical Reverse Recovery Time (ns)44
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)330
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)6680@25V
Typical Reverse Recovery Charge (nC)56
Maximum Drain Source Resistance (mOhm)1.2@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)868
Typical Reverse Transfer Capacitance @ Vds (pF)700@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)45
Description
Trans MOSFET N-CH Si 40V 330A 10-Pin Direct-FET ME T/R
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