PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 10 |
Automotive | No |
Lead Shape | No Lead |
PCB changed | 10 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Quint Source |
Package Width | 5.05(Max) |
Package Height | 0.53(Max) |
Package Length | 5.45(Max) |
Product Category | Power MOSFET |
Supplier Package | Direct-FET ME |
Maximum IDSS (uA) | 1 |
Process Technology | DirectFET |
Typical Fall Time (ns) | 58 |
Typical Rise Time (ns) | 70 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 96000 |
Typical Gate Charge @ 10V (nC) | 123 |
Typical Gate Charge @ Vgs (nC) | 123@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 1035 |
Typical Turn-On Delay Time (ns) | 21 |
Maximum Drain Source Voltage (V) | 40 |
Typical Gate Plateau Voltage (V) | 4.2 |
Typical Turn-Off Delay Time (ns) | 68 |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Gate to Drain Charge (nC) | 44 |
Maximum Gate Threshold Voltage (V) | 3.9 |
Minimum Gate Threshold Voltage (V) | 2.1 |
Typical Gate Threshold Voltage (V) | 3 |
Typical Gate to Source Charge (nC) | 31 |
Typical Reverse Recovery Time (ns) | 44 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 330 |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 6680@25V |
Typical Reverse Recovery Charge (nC) | 56 |
Maximum Drain Source Resistance (mOhm) | 1.2@10V |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 868 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 700@25V |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 45 |
Description | |