Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Not Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Dual Dual Drain |
Package Width | 3 |
Package Height | 0.86 |
Package Length | 3 |
Product Category | Power MOSFET |
Supplier Package | Micro |
Process Technology | HEXFET |
Typical Fall Time (ns) | 9.3 |
Typical Rise Time (ns) | 12 |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 1250 |
Typical Gate Charge @ 10V (nC) | 7.5 |
Typical Gate Charge @ Vgs (nC) | 7.5@10V |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 87 |
Typical Turn-On Delay Time (ns) | 9.7 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 19 |
Typical Gate to Drain Charge (nC) | 2.5 |
Maximum Gate Threshold Voltage (V) | 1(Min) |
Typical Gate to Source Charge (nC) | 1.3 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 1.7 |
Typical Input Capacitance @ Vds (pF) | 180@25V |
Typical Reverse Recovery Charge (nC) | 37 |
Maximum Drain Source Resistance (mOhm) | 270@10V |
Description |