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IRF7507TRPBF
IRF7507TRPBF
MOSFETs IRF7507TRPBF
Infineon
IRF7507TRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7507TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width3
Package Height0.86
Package Length3
Product CategoryPower MOSFET
Supplier PackageMicro
Process TechnologyHEXFET
Typical Fall Time (ns)16@N Channel|43@P Channel
Typical Rise Time (ns)24@N Channel|35@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)1250
Typical Gate Charge @ Vgs (nC)5.3@4.5V@N Channel|5.4@4.5V@P Channel
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)5.7@N Channel|9.1@P Channel
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)15@N Channel|38@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)2.4@N Channel|1.7@P Channel
Typical Input Capacitance @ Vds (pF)260@15V@N Channel|240@15V@P Channel
Maximum Drain Source Resistance (mOhm)140@4.5V@N Channel|270@4.5V@P Channel
Description
Trans MOSFET N/P-CH Si 20V 2.4A/1.7A 8-Pin Micro T/R
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