Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Material | Si |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Dual Drain |
Package Width | 3 |
Package Height | 0.86 |
Package Length | 3 |
Product Category | Power MOSFET |
Supplier Package | Micro |
Process Technology | HEXFET |
Typical Fall Time (ns) | 5.3@N Channel|9.3@P Channel |
Typical Rise Time (ns) | 10@N Channel|12@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 1250 |
Typical Gate Charge @ 10V (nC) | 7.8@N Channel|7.5@P Channel |
Typical Gate Charge @ Vgs (nC) | 7.8@10V@N Channel|7.5@10V@P Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 4.7@N Channel|9.7@P Channel |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 12@N Channel|19@P Channel |
Maximum Gate Threshold Voltage (V) | 1 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 2.7@N Channel|2@P Channel |
Typical Input Capacitance @ Vds (pF) | 210@25V@N Channel|180@25V@P Channel |
Maximum Drain Source Resistance (MOhm) | 110@10V@N Channel|200@10V@P Channel |
Description |