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MOSFETs IRF7580MTRPBF
Infineon
IRF7580MTRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 10 |
| Automotive | No |
| PCB changed | 10 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Quint Source |
| Package Width | 5.05(Max) |
| Package Height | 0.53(Max) |
| Package Length | 5.45(Max) |
| Product Category | Power MOSFET |
| Supplier Package | Direct-FET ME |
| Maximum IDSS (uA) | 1 |
| Process Technology | DirectFET |
| Typical Fall Time (ns) | 21 |
| Typical Rise Time (ns) | 38 |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 96000 |
| Typical Gate Charge @ 10V (nC) | 120 |
| Typical Gate Charge @ Vgs (nC) | 120@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain Source Voltage (V) | 60 |
| Typical Turn-Off Delay Time (ns) | 53 |
| Typical Gate to Drain Charge (nC) | 36 |
| Maximum Gate Threshold Voltage (V) | 3.7 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 114 |
| Typical Input Capacitance @ Vds (pF) | 6510@25V |
| Maximum Drain Source Resistance (mOhm) | 3.6@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Description |
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