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STF17NF25
STF17NF25
MOSFETs STF17NF25
STMicroelectronics
STF17NF25
--
Diodes, Transistors and Thyristors
MOSFETs
STF17NF25.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.6(Max)
Package Height16.4(Max)
Package Length10.4(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220FP
Maximum IDSS (uA)1
Process TechnologySTripFET
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)8.8
Typical Rise Time (ns)17.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)25000
Typical Gate Charge @ 10V (nC)29.5
Typical Gate Charge @ Vgs (nC)29.5@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)178
Typical Turn-On Delay Time (ns)8.8
Maximum Drain Source Voltage (V)250
Typical Gate Plateau Voltage (V)5
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)1.6
Typical Gate to Drain Charge (nC)15.6@10V
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)4.8
Typical Reverse Recovery Time (ns)196
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)17
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)1000@25V
Typical Reverse Recovery Charge (nC)1340
Maximum Drain Source Resistance (mOhm)165@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)68
Typical Reverse Transfer Capacitance @ Vds (pF)28@25V
Description
Trans MOSFET N-CH 250V 17A 3-Pin(3+Tab) TO-220FP Tube
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