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IRL100HS121
IRL100HS121
MOSFETs IRL100HS121
Infineon
IRL100HS121
--
Diodes, Transistors and Thyristors
MOSFETs
IRL100HS121.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width2
Package Height0.88
Package Length2
Product CategoryPower MOSFET
Supplier PackagePQFN EP
Typical Fall Time (ns)10.7
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)3.7@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)7.6
Maximum Drain Source Voltage (V)100
Typical Turn-Off Delay Time (ns)8.7
Maximum Gate Threshold Voltage (V)2
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.1
Typical Input Capacitance @ Vds (pF)440@50V
Maximum Drain Source Resistance (MOhm)42@10V
Description
Trans MOSFET N-CH Si 100V 5.1A 6-Pin PQFN EP T/R
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