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IRF7754GTRPBF
IRF7754GTRPBF
MOSFETs IRF7754GTRPBF
Infineon
IRF7754GTRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationDual Dual Source
Package Width4.4
Package Height1
Package Length3
Product CategoryPower MOSFET
Supplier PackageTSSOP
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)191
Typical Rise Time (ns)18
Number of Elements per Chip2
Maximum Power Dissipation (mW)1000
Typical Gate Charge @ Vgs (nC)22@4.5V
Maximum Gate Source Voltage (V)±8
Typical Turn-On Delay Time (ns)9.8
Maximum Drain Source Voltage (V)12
Typical Turn-Off Delay Time (ns)267
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5.5
Typical Input Capacitance @ Vds (pF)1984@6V
Maximum Drain Source Resistance (MOhm)25@4.5V
Description
Trans MOSFET P-CH Si 12V 5.5A 8-Pin TSSOP T/R
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