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IRF7805QPBF
IRF7805QPBF
MOSFETs IRF7805QPBF
Infineon
IRF7805QPBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7805QPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Maximum IDSS (uA)70
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)16
Typical Rise Time (ns)20
Typical Switch Charge (nC)8.2
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)22@5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)16
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)38
Typical Gate to Drain Charge (nC)6.8
Maximum Gate Threshold Voltage (V)3
Typical Gate to Source Charge (nC)3.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)13
Typical Reverse Recovery Charge (nC)88
Maximum Drain Source Resistance (MOhm)11@4.5V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 30V 13A 8-Pin SOIC
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