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IRF7811ATR
IRF7811ATR
MOSFETs IRF7811ATR
Infineon
IRF7811ATR
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Diodes, Transistors and Thyristors
MOSFETs
IRF7811ATR.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSNot Compliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)6.5
Typical Rise Time (ns)4.1
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)17@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)7.5
Maximum Drain Source Voltage (V)28
Typical Turn-Off Delay Time (ns)19
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Typical Input Capacitance @ Vds (pF)1760@15V
Maximum Drain Source Resistance (mOhm)10@10V
Description
Trans MOSFET N-CH 28V 11A 8-Pin SOIC N T/R
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