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IRF7835PBF
IRF7835PBF
MOSFETs IRF7835PBF
Infineon
IRF7835PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7835PBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain Triple Source
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)4.6
Typical Rise Time (ns)13
Number of Elements per Chip1
Maximum Power Dissipation (mW)2500
Typical Gate Charge @ Vgs (nC)22@4.5V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)9.6
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)14
Maximum Operating Temperature (°C)155
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)19
Typical Input Capacitance @ Vds (pF)2960@15V
Maximum Drain Source Resistance (mOhm)4.5@10V
Description
Trans MOSFET N-CH 30V 19A 8-Pin SOIC
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