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IRF7MS2907
IRF7MS2907
MOSFETs IRF7MS2907
Infineon
IRF7MS2907
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7MS2907.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width6.6(Max)
Package Height13.84(Max)
Package Length13.84(Max)
Product CategoryPower MOSFET
Supplier PackageTO-254AA
Process TechnologyHEXFET
Standard Package NameTO-254-AA
Typical Fall Time (ns)75(Max)
Typical Rise Time (ns)135(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)208000
Typical Gate Charge @ 10V (nC)375(Max)
Typical Gate Charge @ Vgs (nC)375(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)40(Max)
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)175(Max)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)45
Typical Input Capacitance @ Vds (pF)12060@25V
Maximum Drain Source Resistance (mOhm)5.5@10V
Description
Trans MOSFET N-CH Si 75V 45A 3-Pin(3+Tab) TO-254AA
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