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IRF7NA2907
IRF7NA2907
MOSFETs IRF7NA2907
Infineon
IRF7NA2907
--
Diodes, Transistors and Thyristors
MOSFETs
IRF7NA2907.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
PPAPNo
EU RoHSNot Compliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
Pin Count3
AutomotiveNo
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width17.65(Max)
Package Height3.07(Max)
Package Length13.46(Max)
Product CategoryPower MOSFET
Supplier PackageSMD-2
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameSMD
Typical Fall Time (ns)75(Max)
Typical Rise Time (ns)125(Max)
Number of Elements per Chip1
Maximum Power Dissipation (mW)250000
Typical Gate Charge @ 10V (nC)375(Max)
Typical Gate Charge @ Vgs (nC)375(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)40(Max)
Maximum Drain Source Voltage (V)75
Typical Turn-Off Delay Time (ns)175(Max)
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)75
Typical Input Capacitance @ Vds (pF)12000@25V
Maximum Drain Source Resistance (mOhm)4.5@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH Si 75V 75A 3-Pin SMD-2
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