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IRF830A
IRF830A
MOSFETs IRF830A
Vishay
IRF830A
--
Diodes, Transistors and Thyristors
MOSFETs
IRF830A.pdf
Specification
Product AttributeAttribute Value
HTS8542.31.00.01
TabTab
PPAPNo
EU RoHSNot Compliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.7(Max)
Package Height9.01(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Standard Package NameTO-220
Typical Fall Time (ns)15
Typical Rise Time (ns)21
Number of Elements per Chip1
Maximum Power Dissipation (mW)74000
Typical Gate Charge @ 10V (nC)24(Max)
Typical Gate Charge @ Vgs (nC)24(Max)@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)10
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)21
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)5
Typical Input Capacitance @ Vds (pF)620@25V
Maximum Drain Source Resistance (mOhm)1400@10V
Description
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB
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