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IRF8327STR1PBF
IRF8327STR1PBF
MOSFETs IRF8327STR1PBF
Infineon
IRF8327STR1PBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeNo Lead
PCB changed6
Part StatusObsolete
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle Quad Drain
Package Width3.95(Max)
Package Height0.53(Max)
Package Length3.95(Max)
Product CategoryPower MOSFET
Supplier PackageDirect-FET SQ
Maximum IDSS (uA)1
Process TechnologyDirectFET
Typical Fall Time (ns)5.3
Typical Rise Time (ns)8.9
Typical Switch Charge (nC)4.2
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3.7
Maximum Power Dissipation (mW)2200
Typical Gate Charge @ Vgs (nC)9.2@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)370
Typical Turn-On Delay Time (ns)7.8
Maximum Drain Source Voltage (V)30
Typical Turn-Off Delay Time (ns)9.3
Typical Gate to Drain Charge (nC)3
Maximum Gate Threshold Voltage (V)2.4
Minimum Gate Threshold Voltage (V)1.4
Typical Gate Threshold Voltage (V)1.9
Typical Gate to Source Charge (nC)2.7
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-40
Maximum Continuous Drain Current (A)14
Operating Junction Temperature (°C)-40 to 150
Typical Input Capacitance @ Vds (pF)1430@15V
Maximum Drain Source Resistance (mOhm)7.3@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)110
Maximum Power Dissipation on PCB @ TC=25°C (W)2.2
Typical Reverse Transfer Capacitance @ Vds (pF)140@15V
Maximum Continuous Drain Current on PCB @ TC=25°C (A)14
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)58
Description
Trans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R
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