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IRF840ALPBF
IRF840ALPBF
MOSFETs IRF840ALPBF
Vishay
IRF840ALPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF840ALPBF.pdf
Specification
Product AttributeAttribute Value
HTS8542.39.00.01
TabTab
PPAPNo
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.83(Max)
Package Height9.65(Max)
Package Length10.67(Max)
Product CategoryPower MOSFET
Supplier PackageTO-262
Maximum IDSS (uA)25
Standard Package NameI2PAK
Typical Fall Time (ns)19
Typical Rise Time (ns)23
Number of Elements per Chip1
Maximum Power Dissipation (mW)3100
Typical Gate Charge @ 10V (nC)38(Max)
Typical Gate Charge @ Vgs (nC)38(Max)@10V
Maximum Gate Source Voltage (V)±30
Typical Turn-On Delay Time (ns)11
Maximum Drain Source Voltage (V)500
Typical Turn-Off Delay Time (ns)26
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8
Typical Input Capacitance @ Vds (pF)1018@25V
Maximum Drain Source Resistance (mOhm)850@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-262
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