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NTJD4105CT1G
NTJD4105CT1G
MOSFETs NTJD4105CT1G
onsemi
NTJD4105CT1G
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Diodes, Transistors and Thyristors
MOSFETs
NTJD4105CT1G.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
PCB changed6
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual
Package Width1.25
Package Height0.9
Package Length2
Product CategorySmall Signal
Supplier PackageSC-88
Process TechnologyTMOS
Standard Package NameSC
Typical Fall Time (ns)506@N Channel|36@P Channel
Typical Rise Time (ns)227@N Channel|23@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)550
Typical Gate Charge @ Vgs (nC)1.3@4.5V@N Channel|2.2@4.5V@P Channel
Maximum Gate Source Voltage (V)±12@N Channel|±8@P Channel
Typical Turn-On Delay Time (ns)83@N Channel|13@P Channel
Maximum Drain Source Voltage (V)8@P Channel|20@N Channel
Typical Turn-Off Delay Time (ns)786@N Channel|50@P Channel
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.91@N Channel|1.1@P Channel
Typical Input Capacitance @ Vds (pF)33@20V@N Channel|160@8V@P Channel
Maximum Drain Source Resistance (mOhm)375@4.5V@N Channel|300@4.5V@P Channel
Description
Trans MOSFET N/P-CH 20V/8V 0.91A/1.1A 6-Pin SC-88 T/R
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