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IRF8915TRPBF
IRF8915TRPBF
MOSFETs IRF8915TRPBF
Infineon
IRF8915TRPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF8915TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusNRND
Channel ModeEnhancement
Channel TypeN
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)1
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)3.6
Typical Rise Time (ns)12
Typical Switch Charge (nC)2.3
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ Vgs (nC)4.9@4.5V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)180
Typical Turn-On Delay Time (ns)6
Maximum Drain Source Voltage (V)20
Typical Gate Plateau Voltage (V)3.6
Typical Turn-Off Delay Time (ns)7.1
Maximum Diode Forward Voltage (V)1
Typical Gate to Drain Charge (nC)1.7
Maximum Gate Threshold Voltage (V)2.5
Minimum Gate Threshold Voltage (V)1.7
Typical Gate to Source Charge (nC)1.8
Typical Reverse Recovery Time (ns)13
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)8.9
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)540@10V
Typical Reverse Recovery Charge (nC)3.5
Maximum Drain Source Resistance (mOhm)18.3@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)71
Typical Reverse Transfer Capacitance @ Vds (pF)91@10V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62.5
Description
Trans MOSFET N-CH 20V 8.9A 8-Pin SOIC N T/R
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