Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 3.9@N Channel|15@P Channel |
Typical Rise Time (ns) | 4.8@N Channel|14@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ 10V (nC) | 6.8@N Channel|8.1@P Channel |
Typical Gate Charge @ Vgs (nC) | 6.8@10V@N Channel|8.1@10V@P Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Turn-On Delay Time (ns) | 5.1@N Channel|8@P Channel |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 4.9@N Channel|17@P Channel |
Maximum Gate Threshold Voltage (V) | 2.3 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 6.8@N Channel|4.6@P Channel |
Typical Input Capacitance @ Vds (pF) | 398@15V@N Channel|383@15V@P Channel |
Maximum Drain Source Resistance (MOhm) | 27@10V@N Channel|64@10V@P Channel |
Maximum Gate Source Leakage Current (nA) | 100 |
Description |