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IPP65R150CFD
IPP65R150CFD
MOSFETs IPP65R150CFD
Infineon
IPP65R150CFD
--
Diodes, Transistors and Thyristors
MOSFETs
IPP65R150CFD.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPUnknown
EU RoHSCompliant
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveUnknown
PCB changed3
Part StatusUnconfirmed
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.57(Max)
Package Height9.45(Max)
Package Length10.36(Max)
Supplier PackageTO-220
Standard Package NameTO-220
Number of Elements per Chip1
Maximum Power Dissipation (mW)195300
Maximum Drain Source Voltage (V)650
Maximum Gate Threshold Voltage (V)4.5
Maximum Continuous Drain Current (A)22.4
Maximum Drain Source Resistance (mOhm)150@10V
Maximum Pulsed Drain Current @ TC=25°C (A)72
Description
650V Power Transistor
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