Product Attribute | Attribute Value |
PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tube |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Obsolete |
Channel Mode | Enhancement |
Channel Type | P |
Configuration | Single Quad Drain Triple Source |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC |
Maximum IDSS (uA) | 1 |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 58 |
Typical Rise Time (ns) | 47 |
Number of Elements per Chip | 1 |
Maximum Power Dissipation (mW) | 2500 |
Typical Gate Charge @ 10V (nC) | 27 |
Typical Gate Charge @ Vgs (nC) | 27@10V|14@4.5V |
Maximum Gate Source Voltage (V) | ±25 |
Typical Turn-On Delay Time (ns) | 15 |
Maximum Drain Source Voltage (V) | 30 |
Typical Turn-Off Delay Time (ns) | 73 |
Maximum Gate Threshold Voltage (V) | 2.4 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 9.8 |
Typical Input Capacitance @ Vds (pF) | 1270@25V |
Maximum Drain Source Resistance (mOhm) | 17.5@10V |
Maximum Gate Source Leakage Current (nA) | 10000 |
Description |