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IRF9520PBF
IRF9520PBF
MOSFETs IRF9520PBF
Vishay
IRF9520PBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF9520PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.65(Max)
Package Height9.14(Max)
Package Length10.52(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)100
Process TechnologyHEXFET
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)25
Typical Rise Time (ns)29
Number of Elements per Chip1
Maximum Gate Resistance (Ohm)3.9
Minimum Gate Resistance (Ohm)0.8
Maximum Power Dissipation (mW)60000
Typical Gate Charge @ 10V (nC)18(Max)
Typical Gate Charge @ Vgs (nC)18(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)170
Typical Turn-On Delay Time (ns)9.6
Maximum Drain Source Voltage (V)100
Typical Gate Plateau Voltage (V)6
Typical Turn-Off Delay Time (ns)21
Maximum Diode Forward Voltage (V)6.3
Typical Gate to Drain Charge (nC)9(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)3(Max)
Typical Reverse Recovery Time (ns)98
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)6.8
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)390@25V
Typical Reverse Recovery Charge (nC)330
Maximum Drain Source Resistance (mOhm)600@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)27
Typical Reverse Transfer Capacitance @ Vds (pF)45@25V
Description
Trans MOSFET P-CH 100V 6.8A 3-Pin(3+Tab) TO-220AB
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