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IRF9620PBF
IRF9620PBF
MOSFETs IRF9620PBF
Vishay
IRF9620PBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF9620PBF.pdf
Specification
Product AttributeAttribute Value
HTS8541.29.00.95
TabTab
PPAPNo
SVHCYes
EU RoHSCompliant with Exemption
MountingThrough Hole
ECCN (US)EAR99
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width4.7(Max)
Package Height9.01(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)100
Process TechnologyHEXFET
Standard Package NameTO-220
SVHC Exceeds ThresholdYes
Typical Fall Time (ns)15
Typical Rise Time (ns)25
Number of Elements per Chip1
Maximum Power Dissipation (mW)40000
Typical Gate Charge @ 10V (nC)22(Max)
Typical Gate Charge @ Vgs (nC)22(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)200
Typical Turn-Off Delay Time (ns)20
Maximum Gate Threshold Voltage (V)4
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.5
Typical Input Capacitance @ Vds (pF)350@25V
Maximum Drain Source Resistance (mOhm)1500@10V
Maximum Gate Source Leakage Current (nA)100
Description
Trans MOSFET P-CH 200V 3.5A 3-Pin(3+Tab) TO-220AB
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