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Specification
| Product Attribute | Attribute Value |
| HTS | 8541.21.00.95 |
| PPAP | No |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | Gull-wing |
| PCB changed | 8 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Configuration | Dual Dual Drain |
| Package Width | 4(Max) |
| Package Height | 1.5(Max) |
| Package Length | 5(Max) |
| Product Category | Power MOSFET |
| Supplier Package | SOIC N |
| Maximum IDSS (uA) | 2 |
| Process Technology | HEXFET |
| Standard Package Name | SOP |
| Typical Fall Time (ns) | 3@N Channel|6.9@P Channel |
| Typical Rise Time (ns) | 8.8@N Channel|14@P Channel |
| Number of Elements per Chip | 2 |
| Maximum Power Dissipation (mW) | 2000 |
| Typical Gate Charge @ 10V (nC) | 6.9@N Channel|6.1@P Channel |
| Typical Gate Charge @ Vgs (nC) | 6.9@10V@N Channel|6.1@10V@P Channel |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 120@N Channel|110@P Channel |
| Typical Turn-On Delay Time (ns) | 6.2@N Channel|9.7@P Channel |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Gate Plateau Voltage (V) | 3.5@N Channel|4@P Channel |
| Typical Turn-Off Delay Time (ns) | 13@N Channel|20@P Channel |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Typical Diode Forward Voltage (V) | 0.82 |
| Typical Gate to Drain Charge (nC) | 1.8@N Channel|1.1@P Channel |
| Maximum Gate Threshold Voltage (V) | 1(Min) |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 1@N Channel|1.7@P Channel |
| Typical Reverse Recovery Time (ns) | 27 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.5@N Channel|2.3@P Channel |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 190@15V |
| Typical Reverse Recovery Charge (nC) | 28@N Channel|31@P Channel |
| Maximum Drain Source Resistance (MOhm) | 100@10V@N Channel|250@10V@P Channel |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 16@N Channel|10@P Channel |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 61@15V@N Channel|54@15V@P Channel |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.5@N Channel|2.3@P Channel |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
| Description |
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