PPAP | No |
EU RoHS | Compliant |
Mounting | Surface Mount |
ECCN (US) | EAR99 |
Packaging | Tape and Reel |
Pin Count | 8 |
Automotive | No |
Lead Shape | Gull-wing |
PCB changed | 8 |
Part Status | Active |
Channel Mode | Enhancement |
Channel Type | N|P |
Configuration | Dual Dual Drain |
Package Width | 4(Max) |
Package Height | 1.5(Max) |
Package Length | 5(Max) |
Product Category | Power MOSFET |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 2 |
Process Technology | HEXFET |
Standard Package Name | SOP |
Typical Fall Time (ns) | 3@N Channel|6.9@P Channel |
Typical Rise Time (ns) | 8.8@N Channel|14@P Channel |
Number of Elements per Chip | 2 |
Maximum Power Dissipation (mW) | 2000 |
Typical Gate Charge @ 10V (nC) | 6.9@N Channel|6.1@P Channel |
Typical Gate Charge @ Vgs (nC) | 6.9@10V@N Channel|6.1@10V@P Channel |
Maximum Gate Source Voltage (V) | ±20 |
Typical Output Capacitance (pF) | 120@N Channel|110@P Channel |
Typical Turn-On Delay Time (ns) | 6.2@N Channel|9.7@P Channel |
Maximum Drain Source Voltage (V) | 30 |
Typical Gate Plateau Voltage (V) | 3.5@N Channel|4@P Channel |
Typical Turn-Off Delay Time (ns) | 13@N Channel|20@P Channel |
Maximum Diode Forward Voltage (V) | 1.2 |
Typical Diode Forward Voltage (V) | 0.82 |
Typical Gate to Drain Charge (nC) | 1.8@N Channel|1.1@P Channel |
Maximum Gate Threshold Voltage (V) | 1(Min) |
Minimum Gate Threshold Voltage (V) | 1 |
Typical Gate to Source Charge (nC) | 1.7@P Channel|1@N Channel |
Typical Reverse Recovery Time (ns) | 27 |
Maximum Operating Temperature (°C) | 150 |
Minimum Operating Temperature (°C) | -55 |
Maximum Continuous Drain Current (A) | 3.5@N Channel|2.3@P Channel |
Operating Junction Temperature (°C) | -55 to 150 |
Typical Input Capacitance @ Vds (pF) | 190@15V |
Typical Reverse Recovery Charge (nC) | 28@N Channel|31@P Channel |
Maximum Drain Source Resistance (mOhm) | 100@10V@N Channel|250@10V@P Channel |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Positive Gate Source Voltage (V) | 20 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 16@N Channel|10@P Channel |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 2 |
Typical Reverse Transfer Capacitance @ Vds (pF) | 61@15V@N Channel|54@15V@P Channel |
Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.5@N Channel|2.3@P Channel |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 62.5 |
Description | |