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IRF9952TRPBF
IRF9952TRPBF
MOSFETs IRF9952TRPBF
Infineon
IRF9952TRPBF
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Diodes, Transistors and Thyristors
MOSFETs
IRF9952TRPBF.pdf
Specification
Product AttributeAttribute Value
PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count8
AutomotiveNo
Lead ShapeGull-wing
PCB changed8
Part StatusActive
Channel ModeEnhancement
Channel TypeN|P
ConfigurationDual Dual Drain
Package Width4(Max)
Package Height1.5(Max)
Package Length5(Max)
Product CategoryPower MOSFET
Supplier PackageSOIC N
Maximum IDSS (uA)2
Process TechnologyHEXFET
Standard Package NameSOP
Typical Fall Time (ns)3@N Channel|6.9@P Channel
Typical Rise Time (ns)8.8@N Channel|14@P Channel
Number of Elements per Chip2
Maximum Power Dissipation (mW)2000
Typical Gate Charge @ 10V (nC)6.9@N Channel|6.1@P Channel
Typical Gate Charge @ Vgs (nC)6.9@10V@N Channel|6.1@10V@P Channel
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)120@N Channel|110@P Channel
Typical Turn-On Delay Time (ns)6.2@N Channel|9.7@P Channel
Maximum Drain Source Voltage (V)30
Typical Gate Plateau Voltage (V)3.5@N Channel|4@P Channel
Typical Turn-Off Delay Time (ns)13@N Channel|20@P Channel
Maximum Diode Forward Voltage (V)1.2
Typical Diode Forward Voltage (V)0.82
Typical Gate to Drain Charge (nC)1.8@N Channel|1.1@P Channel
Maximum Gate Threshold Voltage (V)1(Min)
Minimum Gate Threshold Voltage (V)1
Typical Gate to Source Charge (nC)1.7@P Channel|1@N Channel
Typical Reverse Recovery Time (ns)27
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)3.5@N Channel|2.3@P Channel
Operating Junction Temperature (°C)-55 to 150
Typical Input Capacitance @ Vds (pF)190@15V
Typical Reverse Recovery Charge (nC)28@N Channel|31@P Channel
Maximum Drain Source Resistance (mOhm)100@10V@N Channel|250@10V@P Channel
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)16@N Channel|10@P Channel
Maximum Power Dissipation on PCB @ TC=25°C (W)2
Typical Reverse Transfer Capacitance @ Vds (pF)61@15V@N Channel|54@15V@P Channel
Maximum Continuous Drain Current on PCB @ TC=25°C (A)3.5@N Channel|2.3@P Channel
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)62.5
Description
Trans MOSFET N/P-CH 30V 3.5A/2.3A 8-Pin SOIC N T/R
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