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IRF9Z24STRRPBF
IRF9Z24STRRPBF
MOSFETs IRF9Z24STRRPBF
Vishay
IRF9Z24STRRPBF
--
Diodes, Transistors and Thyristors
MOSFETs
Specification
Product AttributeAttribute Value
HTS8541.10.00.80
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
PCB changed2
Part StatusObsolete
Channel ModeEnhancement
Channel TypeP
ConfigurationSingle
Package Width9.65(Max)
Package Height4.83(Max)
Package Length10.41(Max)
Product CategoryPower MOSFET
Supplier PackageD2PAK
Maximum IDSS (uA)100
Standard Package NameTO-263
Typical Fall Time (ns)29
Typical Rise Time (ns)68
Number of Elements per Chip1
Maximum Power Dissipation (mW)3700
Typical Gate Charge @ 10V (nC)19(Max)
Typical Gate Charge @ Vgs (nC)19(Max)@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)360
Typical Turn-On Delay Time (ns)13
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)7
Typical Turn-Off Delay Time (ns)15
Maximum Diode Forward Voltage (V)6.3
Typical Gate to Drain Charge (nC)11(Max)
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)5.4(Max)
Typical Reverse Recovery Time (ns)100
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)11
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)570@25V
Typical Reverse Recovery Charge (nC)320
Maximum Drain Source Resistance (MOhm)280@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)44
Typical Reverse Transfer Capacitance @ Vds (pF)65@25V
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)40
Description
Trans MOSFET P-CH Si 60V 11A 3-Pin(2+Tab) D2PAK T/R
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