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IRFB3306PBF
IRFB3306PBF
MOSFETs IRFB3306PBF
Infineon
IRFB3306PBF
--
Diodes, Transistors and Thyristors
MOSFETs
IRFB3306PBF.pdf
Specification
Product AttributeAttribute Value
TabTab
PPAPNo
EU RoHSCompliant with Exemption
MaterialSi
MountingThrough Hole
ECCN (US)EAR99
PackagingTube
Pin Count3
AutomotiveNo
Lead ShapeThrough Hole
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Package Width4.82(Max)
Package Height9.02(Max)
Package Length10.66(Max)
Product CategoryPower MOSFET
Supplier PackageTO-220AB
Maximum IDSS (uA)20
Process TechnologyHEXFET
Standard Package NameTO-220
Typical Fall Time (ns)77
Typical Rise Time (ns)76
Number of Elements per Chip1
Maximum Power Dissipation (mW)230000
Typical Gate Charge @ 10V (nC)85
Typical Gate Charge @ Vgs (nC)85@10V
Maximum Gate Source Voltage (V)±20
Typical Output Capacitance (pF)500
Typical Turn-On Delay Time (ns)15
Maximum Drain Source Voltage (V)60
Typical Gate Plateau Voltage (V)4.9
Typical Turn-Off Delay Time (ns)40
Maximum Diode Forward Voltage (V)1.3
Typical Gate to Drain Charge (nC)26
Maximum Gate Threshold Voltage (V)4
Minimum Gate Threshold Voltage (V)2
Typical Gate to Source Charge (nC)20
Typical Reverse Recovery Time (ns)31
Maximum Operating Temperature (°C)175
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)160
Operating Junction Temperature (°C)-55 to 175
Typical Input Capacitance @ Vds (pF)4520@50V
Typical Reverse Recovery Charge (nC)34
Maximum Drain Source Resistance (mOhm)4.2@10V
Maximum Gate Source Leakage Current (nA)100
Maximum Positive Gate Source Voltage (V)20
Maximum Pulsed Drain Current @ TC=25°C (A)620
Typical Reverse Transfer Capacitance @ Vds (pF)250@50V
Description
Trans MOSFET N-CH Si 60V 160A 3-Pin(3+Tab) TO-220AB Tube
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